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Electric-Double-Layer thin-film transistors (EDLTs) are regarded as ideal devices for potential portable sensors because of large EDL capacitance (>1μF/cm²) at the dielectric/semiconductor interface and low-voltage operation. In general, EDLTs used to be fabricated using organic proton conductors and organic semiconductors. However, such organic materials usually show a limited chemical stability and durability as well as a low field-effect mobility. To avoid these disadvantages, a novel type of field-effect device, oxide-based EDLTs with relatively simple process were fabricated using nanogranular Al₂O₃, SiO₂ and WO_x proton conducting films (PECVD and sputtering) as gate dielectrics, and transparent conductive indium-zinc-oxide (IZO) and indium-tin-oxide films (ITO) as electrodes (source and drain) and channel. Such EDLTs exhibit a low operation voltage of ≤1.8 V, a large current on/off ratio of 10⁶ and a high field-effect mobility of 20 cm²/V·s. This results will provide experimentally and theoretically strong basis and foundation for portable chemical sensors, biosensors, and humidity sensors.